weitron http:// w w w . w ei t r o n .co m . tw drain current -3.5 amperes drain source voltage -8 voltage featu r es: *super high dense cell design for low r applications *power management in notebook computer *portable equipment *battery powered system ds(on) r ds(on) <68m ? @v gs = -4.5 v *rugged and reliable *simple drive requirement *sot-23 package maximum ratings ( t a = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d ) rating symbo l v alue unit drain-source voltage v d s - 8 v gate-source voltage v g s 8 con t inuous drain current 3 ,(t a -3.5 i d pulsed drain current 1 , 2 i d m -12 a ?c tota l po w e r dis s ipation(t a =2 5?c ) p d 225 mw operating junction and storage temperature range t j , t s t g - 55~+15 0 device marking wtc2305 = p5s WTC2305DS p-channel enhancement mode power mosfet 1 2 3 g a te source drain so t -23 1 2 3 24-aug-09 1/ 4
weitron http://www.w e itron . c om.tw electrical characteristics (t a = 2 5 u n less o t he r wise n o t ed) cha r a c t e r i st i c symbol m i n t yp m ax un i t static drain-source breakdown voltage v g s = 0 , i d =-250a v (br)dss - 8 gate-source threshold voltage v d s = v g s , i d =-250 a v g s(th) -0. 45 v g a te-source l e a k a g e c u rrent v g s = 8v i g s s - - 100 na - - - - - -0.8 1 d r ain - sou r ce leakage cu r r e nt(t j =25?c ) v d s =-6.4 v,v g s =0 v d s =-5 v,v g s =-4.5v v d s =-5 v,v g s =-2.5v i d s s i d (on) a drain-source on-resistance 2 v gs =-4.5v,i d =-3.5a v gs =-2.5v,i d =-3. 0 a v gs =-1.8v,i d =- 2.0 a r ds(o n ) - - 47 55 68 81 - 67 118 m forward transconductance on-state drain current 2 v d s =-5.0 v , i d =-3.5a g f s - - - - - -6 -3 8.5 - s a 2/4 WTC2305DS source-drain diode max. diode forward current i s -1.6 a diode forward voltage v sd i s -1.2 = -1.6a, v gs = 0v v note : 1 . pulse test: pulse width <= 300us, duty cycle<= 2% 2. static parameters are based on package leve l with recommended wire-bonding dynamic turn-on delay time t d(on) v dd = -4v, rl= 4 ? i d = -1a, v gen = -4.5v , , r g = 6 ? v dd = -4v, rl= 4 ? i d = -1a, v gen = -4.5v , , r g = 6 ? v dd = -4v, rl= 4 ? i d = -1a, v gen = -4.5v , , r g = 6 ? v dd = -4v, rl= 4 ? i d = -1a, v gen = -4.5v , , r g = 6 ? , 13 ns ns ns ns turn-on rise time t r 25 turn-off delay time t d(off) 55 turn-off fall time t f 19 20 40 80 35 input capacitance c iss v ds = -4v, v gs = 0v f = 1.0 mhz , v ds = -4v, v gs = 0v f = 1.0 mhz , v ds = -4v, v gs = 0v f = 1.0 mhz 1245 pf pf pf output capacitance c oss 375 reverse transfer capacitance c rss 210 3. guaranteed by design; not subject to production testing 24-aug-09
weitron http://ww w .weit r on.com.tw WTC2305DS 3/5 vgs gate-to-source voltage(v) id drain current(a) vds drain-to-source voltage(v) id drain current(a) id drain current(a) rds(on) on-resistance vgs gate-to-source voltage(v) rds(on) on-resistance figure 1. t ransfer characteristics figure 2. on?region characteristics figure 3. on?resistance versus drain current figure 4. on-resistance vs. gate-to-source voltage typical electrical characteristics 24-aug-09
WTC2305DS weitron http://ww w .weit r on.com.tw 4/5 24-aug-09 figure 5. gate charge figure 6. capacitance figure 7. on-resistance vs.junction temperature
weitron http://ww w .weit r on.com.tw WTC2305DS dim a b c d e g h j k l m min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 a b d e g m l h j t o p view k c so t -23 so t -23 outline dimension 24-aug-09 5/5
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